Inventor : Milton Feng, Nick Holonyak, Jr., Mong-Kai Wu, Fei Tan
Appl. No. : 15/732 ,310 (2019)
Published Number : US20190123513A1
Published Date : 25 April 2019
Citation: Milton Feng, Nick Holonyak, Jr., Mong-Kai Wu, Fei Tan (2019).Transistor laser electrical and optical bistable switching. 15/732 ,310 (2019). US20190123513A1.
Author : Milton Feng, Ardy Winoto, Junyi Qiu, Yu-Ting Peng, Nick Holonyak
Published in: 2018 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)
Publication Date : 05 July 2018 ; Conference Date : 16-14 April 2018
INSPEC Accession Number: 17896272
Citation: Milton Feng, Ardy Winoto, Junyi Qiu, Yu-Ting Peng, Nick Holonyak(2018).All optical NOR gate via tunnel-junction transistor lasers for high speed optical logic processors. 2018 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA). DOI: 10.1109/VLSI-TSA.2018.8403847.
Author : Milton Feng, Junyi Qiu, Nick Holonyak
Published in: IEEE Journal of Quantum Electronics ( Volume: 54 , Issue: 2 , April 2018 )
Publication Date : 27 Feb 2018
INSPEC Accession Number: 17612871
Citation:Milton Feng, Junyi Qiu, Nick Holonyak (2018).Tunneling Modulation of Transistor Lasers: Theory and Experiment. IEEE Journal of Quantum Electronics ( Volume: 54 , Issue: 2 , April 2018 ). DOI: 10.1109/JQE.2018.2809471.
Author : Curtis Wang, Milton Feng, Nick Holonyak
Published in: 2018 Conference on Lasers and Electro-Optics (CLEO)
Publication Date : 09 Aug 2018 ; Conference Date : 13-18 May 2018
INSPEC Accession Number: 18024587
Citation:Curtis Wang, Milton Feng, Nick Holonyak (2018).Electro-Optical Bistability in Semiconductor Laser. 2018 Conference on Lasers and Electro-Optics (CLEO).
Author : Milton Feng, Nick Holonyak, Junyi Qiu, C. Y. Wang
Published in: 2017 IEEE Photonics Society Summer Topical Meeting Series (SUM)
Publication Date : 21 Aug 2017 ; Conference Date : 10-12 Jully 2018
INSPEC Accession Number: 17103909
Citation: Milton Feng, Nick Holonyak, Junyi Qiu, C. Y. Wang(2017).Current and future trend of energy/bit for high speed uncool optical links (50 Gb/s and 75°C). 2017 IEEE Photonics Society Summer Topical Meeting Series (SUM). DOI: 10.1109/PHOSST.2017.8012715.
Inventor : Milton Feng, Nick Holonyak, Jr., Mong-Kai Wu
Appl. No. : 14/545,587 (2016)
Patent Number : US9478942
Patent Date : 25 Oct 2016
Citation: Milton Feng, Nick Holonyak, Jr., Mong-Kai Wu(2016).Transistor laser optical switching and memory techniques and devices. 14/545,587 (2016). US9478942.
Inventor : Milton Feng, Nick Holonyak, Jr., Chao-Hsin Wu
Appl. No. : 13/633,383 (2015)
Patent Number : US008970126B2
Patent Date : 03 Mac 2015
Citation: Milton Feng, Nick Holonyak, Jr., Chao-Hsin Wu(2015).Opto-electronic devices and methods. 13/633,383 (2015). US008970126B2.
Author : Rohan Bambery, Curtis Yilin Wang, Fei Tan, Milton Feng, Nick Holonyak
Published in: IEEE Photonics Technology Letters ( Volume: 27 , Issue: 6 , March15, 15 2015 )
Publication Date : 08 Jan 2015
INSPEC Accession Number: 14945600
Citation: Rohan Bambery, Curtis Yilin Wang, Fei Tan, Milton Feng, Nick Holonyak (2015).Single Quantum-Well Transistor Lasers Operating Error-Free at 22 Gb/s. IEEE Photonics Technology Letters ( Volume: 27 , Issue: 6 , March15, 15 2015 ). DOI: 10.1109/LPT.2014.2385833.
Inventor : Milton Feng, Nick Holonyak, Jr., Rohan Bambery, Fei Tan, Mong-Kai Wu, Michael Liu
Appl. No. : 14/469,132 (2015)
Published Number : US20150255954A1
Published Date : 10 Sept 2015
Citation: Milton Feng, Nick Holonyak, Jr., Rohan Bambery, Fei Tan, Mong-Kai Wu, Michael Liu (2015).Method And Device For Producing Laser Emission. 14/469,132 (2015).
Author : Milton Feng, Michael Liu, Curtis Wang, Nick Holonyak
Published in: 2015 IEEE Summer Topicals Meeting Series (SUM)
Publication Date : 10 Sept 2015 ; Conference Date : 13-15 July 2015
INSPEC Accession Number: 15439493
Citation: Milton Feng, Michael Liu, Curtis Wang, Nick Holonyak(2015).Vertical cavity transistor laser for on-chip OICs. 2015 IEEE Summer Topicals Meeting Series (SUM). DOI: 10.1109/PHOSST.2015.7248238.
Inventor : Gabriel Walter, Milton Feng, Nick Holonyak, Jr.
Appl. No. : 12/6S5,806 (2014)
Patent Number : US008675703B2
Patent Date : 18 Mac 2014
Citation: Gabriel Walter, Milton Feng, Nick Holonyak, Jr.(2014).Two terminal light emitting and lasing devices and methods. 12/6S5,806 (2014). US008675703B2.
Inventor : Nick Holonyak, Jr., Milton Feng, Gabriel Walter
Appl. No. : 12/6.55,807 (2014)
Patent Number : US8638830B2
Patent Date : 28 Jan 2014
Citation: Nick Holonyak, Jr., Milton Feng, Gabriel Walter(2014).Light emitting and lasing semiconductor devices and methods. 12/6.55,807(2014). US8638830B2.
Author : Mong-Kai Wu, Michael Liu, Rohan Bambery, Milton Feng, Nick Holonyak
Published in: IEEE Photonics Technology Letters ( Volume: 26 , Issue: 10 , May15, 2014 )
Publication Date : 24 Mac 2014
INSPEC Accession Number: 14252130
Citation: Mong-Kai Wu, Michael Liu, Rohan Bambery, Milton Feng, Nick Holonyak(2014).Low Power Operation of a Vertical Cavity Transistor Laser via the Reduction of Collector Offset Voltage. IEEE Photonics Technology Letters ( Volume: 26 , Issue: 10 , May15, 2014 ). DOI: 10.1109/LPT.2014.2312360
Author : Han Wui Then ; Milton Feng ; Nick Holonyak
Published in: Proceedings of the IEEE ( Volume: 101 , Issue: 10 , Oct. 2013 )
Publication Date : 28 Aug 2013
INSPEC Accession Number: 13778288
Citation: Han Wui Then, Milton Feng, Nick Holonyak(2013).The Transistor Laser: Theory and Experiment. Proceedings of the IEEE ( Volume: 101 , Issue: 10 , Oct. 2013 ). DOI: 10.1109/JPROC.2013.2274935.
Inventor : Gabriel Walter, Milton Feng, Nick Holonyak, Jr., Han Wui Then, Chao-Hsin Wu
Appl. No. : 12/799,083(2012)
Patent Number : US008179937B2
Patent Date : 15 May 2012
Citation: Gabriel Walter, Milton Feng, Nick Holonyak, Jr., Han Wui Then, Chao-Hsin Wu (2012). High speed light emitting semiconductor methods and devices. 12/799,083(2012). US008179937B2.
Inventor : Gabriel Walter, Milton Feng, Nick Holonyak, Jr., Han Wui Then, Chao-Hsin Wu
Appl. No. : 12/287,713(2012)
Patent Number : US8159287B2
Patent Date : 17 Apr 2012
Citation: Gabriel Walter, Milton Feng, Nick Holonyak, Jr., Han Wui Then, Chao-Hsin Wu(2012). Transistor device and method. 12/287,713(2012). US8159287B2.
Author : Mong-Kai Wu, Milton Feng, Nick Holonyak
Published in: IEEE Photonics Technology Letters ( Volume: 24 , Issue: 15 , Aug.1, 2012 )
Publication Date: 8 June 2012
INSPEC Accession Number: 12846608
Citation: Mong-Kai Wu, Milton Feng, Nick Holonyak (2012). Surface Emission Vertical Cavity Transistor Laser. IEEE Photonics Technology Letters ( Volume: 24 , Issue: 15 , Aug.1, 2012 ). DOI: 10.1109/LPT.2012.2203356.
Inventor : Nick Holonyak, Jr., Milton Feng, Gabriel Walter, Adam James
Appl. No. : 12/287 697(2011)
Patent Number : US7953133B2
Patent Date : 31 May 2011
Citation: Nick Holonyak, Jr., Milton Feng, Gabriel Walter, Adam James (2011). Light emitting and lasing semiconductor devices and methods. 12/287 697 (2011). US7953133B2.
Inventor : Han Wui Then, Gabriel Walter, Milton Feng, Nick Holonyak, Jr.
Appl. No. : 12/587,895 (2011)
Patent Number : US8005124B2
Patent Date : 23 Aug 2011
Citation: Han Wui Then, Gabriel Walter, Milton Feng, Nick Holonyak, Jr.(2011). Optical bandwidth enhancement of light emitting and lasing transistor devices and circuits. 12/587,895 (2011). US8005124B2.
Inventor : Nick Holonyak, Jr., Milton Feng, Gabriel Walter
Appl. No. : 11/805359 (2010)
Patent Number : US7711015B2
Patent Date : 04 May 2010
Citation: Nick Holonyak, Jr., Milton Feng, Gabriel Walter (2010). Method for controlling operation of light emitting transistors and laser transistors. 11/805359 (2010). US7711015B2.
Inventor : Milton Feng, Nick Holonyak, Jr., Gabriel Walter, Han Wui Then
Appl. No. : 12/384,772 (2010)
Patent Number : US7813396B2
Patent Date : 12 Oct 2010
Citation: Milton Feng, Nick Holonyak, Jr., Gabriel Walter, Han Wui Then (2010). Transistor laser devices and methods. 12/384,772 (2010). US7813396B2.
Inventor : Gabriel Walter, Nick Holonyak, Jr., Milton Feng, Richard Chan
Appl. No. : 11/364,893 (2009)
Patent Number : US7535034
Patent Date : 19 May 2009
Citation: Gabriel Walter, Nick Holonyak, Jr., Milton Feng, Richard Chan (2009). PNP light emitting transistor and method. 11/364,893 (2009). US7535034.
Inventor : Milton Feng, Nick Holonyak, Walid Hafez
Appl. No. : 10/646,457(2005)
Publication Number : US20050040432A1
Publication Date : 24 Feb 2005
Citation: Milton Feng, Nick Holonyak, Walid Hafez (2005). Light emitting device and method.10/646,457(2005). US20050040432A1.
Author : Nick Holonyak
Published In : Volume 30, Issue 7 July 2005 , pp. 509-515
Published Online : 31 January 2011
Citation: Nick Holonyak (2005). From Transistors to Lasers and Light-Emitting Diodes. Volume 30, Issue 7 July 2005 , pp. 509-515. doi.org/10.1557/mrs2005.142
Author : G. Walter, N. Holonyak Jr., M. Feng, and R. Chan
Appl. Phys. Lett. 85, 4768 (2004)
Published Online: 16 November 2004; Accepted : Accepted: August 2004
Citation: G. Walter, N. Holonyak Jr., M. Feng, and R. Chan(2004). Laser operation of a heterojunction bipolar light-emitting transistor.doi.org/10.1063/1.1818331
Author : N. Holonyak
Published In : IEEE Journal of Selected Topics in Quantum Electronics ( Volume: 6 , Issue: 6 , Nov.-Dec. 2000 )
INSPEC Accession Number: 6868209
Publication Date: December 2000
Citation: N. Holonyak(2000). From transistors to light emitters.IEEE Journal of Selected Topics in Quantum Electronics ( Volume: 6 , Issue: 6 , Nov.-Dec. 2000 ).Doi: 10.1109/2944.902167
Inventor : Michael Ludowise, Nick Holonyak, Jr., Stephen J. Caracci, Michael R. Krames, Fred A. Kish
Appl. No. : 193,681 (1995)
Patent Number : US4817103
Patent Date : 21 Mac 1995
Citation: Michael Ludowise, Nick Holonyak, Jr., Stephen J. Caracci, Michael R. Krames, Fred A. Kish (1995). Laminated upper cladding structure for a light-emitting device. Applied No 193,681 (1995). US5400354.
Inventor : Nick Holonyak, Jr., Nada El-Zein, Fred A. Kish
Appl. No. : 287,784 (1995)
Patent Number : US5425043
Patent Date : 13 Jun 1995
Citation: Nick Holonyak, Jr., Nada El-Zein, Fred A. Kish(1995). Semiconductor laser. Applied No 287,784 (1995). US5425043.
Inventor : Nick Holonyak, Jr., Nada El-Zein, Fred A. Kish
Appl. No. : 927,822 (1994)
Patent Number : US5353295
Patent Date : 04 Oct 1994
Citation: Nick Holonyak, Jr., Nada El-Zein, Fred A. Kish(1994). Semiconductor laser device with coupled cavities. Applied No 927,822 (1994). US5353295.
Inventor : Nick Holonyak, Jr.Dennis Deppe
Appl. No. : 915,583 (1989)
Patent Number : US4817103
Patent Date : 28 Mac 1989
Citation: Nick Holonyak, Jr.Dennis Deppe(1989). Semiconductor light emitting device with stacked active regions. Applied No 915,583 (1989). US4817103.
Author : N. Holonyak
Published in: IEEE Journal of Quantum Electronics ( Volume: 23 , Issue: 6 , Jun 1987 )
Publication Date : Jun 1987
Citation: N. Holonyak(1987). Semiconductor alloy lasers. IEEE Journal of Quantum Electronics ( Volume: 23 , Issue: 6 , Jun 1987 ). Doi:10.1109/JQE.1987.1073455.
Inventor : Robert Burnham, Nick Holonyak, Jr., Harlan F. Chung
Appl. No. : 530,555(1986)
Patent Number : US4589115
Patent Date : 13 May 1986
Citation: Robert Burnham, Nick Holonyak, Jr., Harlan F. Chung(1986). Wavelength tuning of quantum well heterostructure lasers using an external grating. 530,555(1986). US4589115.
Inventor : Nick Holonyak, Jr.Wyn D. Laidig
Appl. No. : 260,956 (1983)
Patent Number : US4378255
Patent Date : 29 Mac 1983
Citation: Nick Holonyak, Jr.Wyn D. Laidig(1982). Method for producing integrated semiconductor light emitter. Applied No 260,956 (1983). US4378255.
Inventor : Nick Holonyak, Jr.
Appl. No. : 214,894 (1982)
Patent Number : US4365260
Patent Date : 21 Dec 1982
Citation: Nick Holonyak, Jr.(1982). Semiconductor light emitting device with quantum well active region of indirect bandgap semiconductor material.Applied No 214,894 (1981). Publication of US4270094A.
Inventor : Nick Holonyak, Jr.
Appl. No. : 951,515 (1981)
Patent Number : US4270094A
Patent Date : 26 May 1981
Citation: Nick Holonyak, Jr. (1981). Semiconductor light emitting device. Applied No 951,515 (1981). Publication of US4270094A.
Author : George D. Clark, Jr. and Nick Holonyak, Jr.
Phys. Rev. 156, 913
Received :26 August 1966; Published: 15 April 1967
Citation: George D. Clark, Jr. and Nick Holonyak, Jr.(1967). Optical Properties of Gallium Arsenide-Phosphide. doi.org/10.1103/PhysRev.156.913
Author : Nick Holonyak Jr. and S. F. Bevacqua
Appl. Phys. Lett. 1, 82 (1962)
Published Online: 23 December 2004
Citation: Nick Holonyak Jr. and S. F. Bevacqua(1962). COHERENT (VISIBLE) LIGHT EMISSION FROM Ga(As1−xPx) JUNCTIONS.doi.org/10.1063/1.1753706
Author : Nick Holonyak
Published In : Proceedings of the IRE ( Volume: 50 , Issue: 12 , Dec. 1962 )
Publication Date: December 1962
Citation: Nick Holonyak(1962). Double Injection Diodes and Related DI Phenomena in Semiconductors. Proceedings of the IRE ( Volume: 50 , Issue: 12 , Dec. 1962 ).Doi: 10.1109/JRPROC.1962.288258