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2019


Transistor laser electrical and optical bistable switching

Inventor : Milton Feng, Nick Holonyak, Jr., Mong-Kai Wu, Fei Tan
Appl. No. : 15/732 ,310 (2019)
Published Number : US20190123513A1
Published Date : 25 April 2019

Citation: Milton Feng, Nick Holonyak, Jr., Mong-Kai Wu, Fei Tan (2019).Transistor laser electrical and optical bistable switching. 15/732 ,310 (2019). US20190123513A1.


2018


All optical NOR gate via tunnel-junction transistor lasers for high speed optical logic processors

Author : Milton Feng, Ardy Winoto, Junyi Qiu, Yu-Ting Peng, Nick Holonyak
Published in: 2018 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)
Publication Date : 05 July 2018 ; Conference Date : 16-14 April 2018
INSPEC Accession Number: 17896272

Citation: Milton Feng, Ardy Winoto, Junyi Qiu, Yu-Ting Peng, Nick Holonyak(2018).All optical NOR gate via tunnel-junction transistor lasers for high speed optical logic processors. 2018 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA). DOI: 10.1109/VLSI-TSA.2018.8403847.


Tunneling Modulation of Transistor Lasers: Theory and Experiment

Author : Milton Feng, Junyi Qiu, Nick Holonyak
Published in: IEEE Journal of Quantum Electronics ( Volume: 54 , Issue: 2 , April 2018 )
Publication Date : 27 Feb 2018
INSPEC Accession Number: 17612871

Citation:Milton Feng, Junyi Qiu, Nick Holonyak (2018).Tunneling Modulation of Transistor Lasers: Theory and Experiment. IEEE Journal of Quantum Electronics ( Volume: 54 , Issue: 2 , April 2018 ). DOI: 10.1109/JQE.2018.2809471.


Electro-Optical Bistability in Semiconductor Laser

Author : Curtis Wang, Milton Feng, Nick Holonyak
Published in: 2018 Conference on Lasers and Electro-Optics (CLEO)
Publication Date : 09 Aug 2018 ; Conference Date : 13-18 May 2018
INSPEC Accession Number: 18024587

Citation:Curtis Wang, Milton Feng, Nick Holonyak (2018).Electro-Optical Bistability in Semiconductor Laser. 2018 Conference on Lasers and Electro-Optics (CLEO).


2017


Current and future trend of energy/bit for high speed uncool optical links (50 Gb/s and 75°C)

Author : Milton Feng, Nick Holonyak, Junyi Qiu, C. Y. Wang
Published in: 2017 IEEE Photonics Society Summer Topical Meeting Series (SUM)
Publication Date : 21 Aug 2017 ; Conference Date : 10-12 Jully 2018
INSPEC Accession Number: 17103909

Citation: Milton Feng, Nick Holonyak, Junyi Qiu, C. Y. Wang(2017).Current and future trend of energy/bit for high speed uncool optical links (50 Gb/s and 75°C). 2017 IEEE Photonics Society Summer Topical Meeting Series (SUM). DOI: 10.1109/PHOSST.2017.8012715.


2016


Transistor laser optical switching and memory techniques and devices

Inventor : Milton Feng, Nick Holonyak, Jr., Mong-Kai Wu
Appl. No. : 14/545,587 (2016)
Patent Number : US9478942
Patent Date : 25 Oct 2016

Citation: Milton Feng, Nick Holonyak, Jr., Mong-Kai Wu(2016).Transistor laser optical switching and memory techniques and devices. 14/545,587 (2016). US9478942.


2015


Opto-electronic devices and methods

Inventor : Milton Feng, Nick Holonyak, Jr., Chao-Hsin Wu
Appl. No. : 13/633,383 (2015)
Patent Number : US008970126B2
Patent Date : 03 Mac 2015

Citation: Milton Feng, Nick Holonyak, Jr., Chao-Hsin Wu(2015).Opto-electronic devices and methods. 13/633,383 (2015). US008970126B2.


Single Quantum-Well Transistor Lasers Operating Error-Free at 22 Gb/s

Author : Rohan Bambery, Curtis Yilin Wang, Fei Tan, Milton Feng, Nick Holonyak
Published in: IEEE Photonics Technology Letters ( Volume: 27 , Issue: 6 , March15, 15 2015 )
Publication Date : 08 Jan 2015
INSPEC Accession Number: 14945600

Citation: Rohan Bambery, Curtis Yilin Wang, Fei Tan, Milton Feng, Nick Holonyak (2015).Single Quantum-Well Transistor Lasers Operating Error-Free at 22 Gb/s. IEEE Photonics Technology Letters ( Volume: 27 , Issue: 6 , March15, 15 2015 ). DOI: 10.1109/LPT.2014.2385833.


Method And Device For Producing Laser Emission

Inventor : Milton Feng, Nick Holonyak, Jr., Rohan Bambery, Fei Tan, Mong-Kai Wu, Michael Liu
Appl. No. : 14/469,132 (2015)
Published Number : US20150255954A1
Published Date : 10 Sept 2015

Citation: Milton Feng, Nick Holonyak, Jr., Rohan Bambery, Fei Tan, Mong-Kai Wu, Michael Liu (2015).Method And Device For Producing Laser Emission. 14/469,132 (2015).


Vertical cavity transistor laser for on-chip OICs

Author : Milton Feng, Michael Liu, Curtis Wang, Nick Holonyak
Published in: 2015 IEEE Summer Topicals Meeting Series (SUM)
Publication Date : 10 Sept 2015 ; Conference Date : 13-15 July 2015
INSPEC Accession Number: 15439493

Citation: Milton Feng, Michael Liu, Curtis Wang, Nick Holonyak(2015).Vertical cavity transistor laser for on-chip OICs. 2015 IEEE Summer Topicals Meeting Series (SUM). DOI: 10.1109/PHOSST.2015.7248238.


2014


Two terminal light emitting and lasing devices and methods

Inventor : Gabriel Walter, Milton Feng, Nick Holonyak, Jr.
Appl. No. : 12/6S5,806 (2014)
Patent Number : US008675703B2
Patent Date : 18 Mac 2014

Citation: Gabriel Walter, Milton Feng, Nick Holonyak, Jr.(2014).Two terminal light emitting and lasing devices and methods. 12/6S5,806 (2014). US008675703B2.


Light emitting and lasing semiconductor devices and methods

Inventor : Nick Holonyak, Jr., Milton Feng, Gabriel Walter
Appl. No. : 12/6.55,807 (2014)
Patent Number : US8638830B2
Patent Date : 28 Jan 2014

Citation: Nick Holonyak, Jr., Milton Feng, Gabriel Walter(2014).Light emitting and lasing semiconductor devices and methods. 12/6.55,807(2014). US8638830B2.


Low Power Operation of a Vertical Cavity Transistor Laser via the Reduction of Collector Offset Voltage

Author : Mong-Kai Wu, Michael Liu, Rohan Bambery, Milton Feng, Nick Holonyak
Published in: IEEE Photonics Technology Letters ( Volume: 26 , Issue: 10 , May15, 2014 )
Publication Date : 24 Mac 2014
INSPEC Accession Number: 14252130

Citation: Mong-Kai Wu, Michael Liu, Rohan Bambery, Milton Feng, Nick Holonyak(2014).Low Power Operation of a Vertical Cavity Transistor Laser via the Reduction of Collector Offset Voltage. IEEE Photonics Technology Letters ( Volume: 26 , Issue: 10 , May15, 2014 ). DOI: 10.1109/LPT.2014.2312360


2013


The Transistor Laser: Theory and Experiment

Author : Han Wui Then ; Milton Feng ; Nick Holonyak
Published in: Proceedings of the IEEE ( Volume: 101 , Issue: 10 , Oct. 2013 )
Publication Date : 28 Aug 2013
INSPEC Accession Number: 13778288

Citation: Han Wui Then, Milton Feng, Nick Holonyak(2013).The Transistor Laser: Theory and Experiment. Proceedings of the IEEE ( Volume: 101 , Issue: 10 , Oct. 2013 ). DOI: 10.1109/JPROC.2013.2274935.


2012


High speed light emitting semiconductor methods and devices

Inventor : Gabriel Walter, Milton Feng, Nick Holonyak, Jr., Han Wui Then, Chao-Hsin Wu
Appl. No. : 12/799,083(2012)
Patent Number : US008179937B2
Patent Date : 15 May 2012

Citation: Gabriel Walter, Milton Feng, Nick Holonyak, Jr., Han Wui Then, Chao-Hsin Wu (2012). High speed light emitting semiconductor methods and devices. 12/799,083(2012). US008179937B2.


Transistor device and method

Inventor : Gabriel Walter, Milton Feng, Nick Holonyak, Jr., Han Wui Then, Chao-Hsin Wu
Appl. No. : 12/287,713(2012)
Patent Number : US8159287B2
Patent Date : 17 Apr 2012

Citation: Gabriel Walter, Milton Feng, Nick Holonyak, Jr., Han Wui Then, Chao-Hsin Wu(2012). Transistor device and method. 12/287,713(2012). US8159287B2.


Surface Emission Vertical Cavity Transistor Laser

Author : Mong-Kai Wu, Milton Feng, Nick Holonyak
Published in: IEEE Photonics Technology Letters ( Volume: 24 , Issue: 15 , Aug.1, 2012 )
Publication Date: 8 June 2012
INSPEC Accession Number: 12846608

Citation: Mong-Kai Wu, Milton Feng, Nick Holonyak (2012). Surface Emission Vertical Cavity Transistor Laser. IEEE Photonics Technology Letters ( Volume: 24 , Issue: 15 , Aug.1, 2012 ). DOI: 10.1109/LPT.2012.2203356.


2011


Light emitting and lasing semiconductor devices and methods

Inventor : Nick Holonyak, Jr., Milton Feng, Gabriel Walter, Adam James
Appl. No. : 12/287 697(2011)
Patent Number : US7953133B2
Patent Date : 31 May 2011

Citation: Nick Holonyak, Jr., Milton Feng, Gabriel Walter, Adam James (2011). Light emitting and lasing semiconductor devices and methods. 12/287 697 (2011). US7953133B2.


Optical bandwidth enhancement of light emitting and lasing transistor devices and circuits

Inventor : Han Wui Then, Gabriel Walter, Milton Feng, Nick Holonyak, Jr.
Appl. No. : 12/587,895 (2011)
Patent Number : US8005124B2
Patent Date : 23 Aug 2011

Citation: Han Wui Then, Gabriel Walter, Milton Feng, Nick Holonyak, Jr.(2011). Optical bandwidth enhancement of light emitting and lasing transistor devices and circuits. 12/587,895 (2011). US8005124B2.


2010


Method for controlling operation of light emitting transistors and laser transistors

Inventor : Nick Holonyak, Jr., Milton Feng, Gabriel Walter
Appl. No. : 11/805359 (2010)
Patent Number : US7711015B2
Patent Date : 04 May 2010

Citation: Nick Holonyak, Jr., Milton Feng, Gabriel Walter (2010). Method for controlling operation of light emitting transistors and laser transistors. 11/805359 (2010). US7711015B2.


Transistor laser devices and methods

Inventor : Milton Feng, Nick Holonyak, Jr., Gabriel Walter, Han Wui Then
Appl. No. : 12/384,772 (2010)
Patent Number : US7813396B2
Patent Date : 12 Oct 2010

Citation: Milton Feng, Nick Holonyak, Jr., Gabriel Walter, Han Wui Then (2010). Transistor laser devices and methods. 12/384,772 (2010). US7813396B2.


2009


PNP light emitting transistor and method

Inventor : Gabriel Walter, Nick Holonyak, Jr., Milton Feng, Richard Chan
Appl. No. : 11/364,893 (2009)
Patent Number : US7535034
Patent Date : 19 May 2009

Citation: Gabriel Walter, Nick Holonyak, Jr., Milton Feng, Richard Chan (2009). PNP light emitting transistor and method. 11/364,893 (2009). US7535034.


2005


Light emitting device and method

Inventor : Milton Feng, Nick Holonyak, Walid Hafez
Appl. No. : 10/646,457(2005)
Publication Number : US20050040432A1
Publication Date : 24 Feb 2005

Citation: Milton Feng, Nick Holonyak, Walid Hafez (2005). Light emitting device and method.10/646,457(2005). US20050040432A1.


From Transistors to Lasers and Light-Emitting Diodes

Author : Nick Holonyak
Published In : Volume 30, Issue 7 July 2005 , pp. 509-515
Published Online : 31 January 2011

Citation: Nick Holonyak (2005). From Transistors to Lasers and Light-Emitting Diodes. Volume 30, Issue 7 July 2005 , pp. 509-515. doi.org/10.1557/mrs2005.142


2004


Laser operation of a heterojunction bipolar light-emitting transistor

Author : G. Walter, N. Holonyak Jr., M. Feng, and R. Chan
Appl. Phys. Lett. 85, 4768 (2004)
Published Online: 16 November 2004; Accepted : Accepted: August 2004

Citation: G. Walter, N. Holonyak Jr., M. Feng, and R. Chan(2004). Laser operation of a heterojunction bipolar light-emitting transistor.doi.org/10.1063/1.1818331


2000


From transistors to light emitters

Author : N. Holonyak
Published In : IEEE Journal of Selected Topics in Quantum Electronics ( Volume: 6 , Issue: 6 , Nov.-Dec. 2000 )
INSPEC Accession Number: 6868209
Publication Date: December 2000

Citation: N. Holonyak(2000). From transistors to light emitters.IEEE Journal of Selected Topics in Quantum Electronics ( Volume: 6 , Issue: 6 , Nov.-Dec. 2000 ).Doi: 10.1109/2944.902167


1995


Laminated upper cladding structure for a light-emitting device

Inventor : Michael Ludowise, Nick Holonyak, Jr., Stephen J. Caracci, Michael R. Krames, Fred A. Kish
Appl. No. : 193,681 (1995)
Patent Number : US4817103
Patent Date : 21 Mac 1995

Citation: Michael Ludowise, Nick Holonyak, Jr., Stephen J. Caracci, Michael R. Krames, Fred A. Kish (1995). Laminated upper cladding structure for a light-emitting device. Applied No 193,681 (1995). US5400354.


Semiconductor laser

Inventor : Nick Holonyak, Jr., Nada El-Zein, Fred A. Kish
Appl. No. : 287,784 (1995)
Patent Number : US5425043
Patent Date : 13 Jun 1995

Citation: Nick Holonyak, Jr., Nada El-Zein, Fred A. Kish(1995). Semiconductor laser. Applied No 287,784 (1995). US5425043.


1994


Semiconductor laser device with coupled cavities

Inventor : Nick Holonyak, Jr., Nada El-Zein, Fred A. Kish
Appl. No. : 927,822 (1994)
Patent Number : US5353295
Patent Date : 04 Oct 1994

Citation: Nick Holonyak, Jr., Nada El-Zein, Fred A. Kish(1994). Semiconductor laser device with coupled cavities. Applied No 927,822 (1994). US5353295.


1989


Semiconductor light emitting device with stacked active regions

Inventor : Nick Holonyak, Jr.Dennis Deppe
Appl. No. : 915,583 (1989)
Patent Number : US4817103
Patent Date : 28 Mac 1989

Citation: Nick Holonyak, Jr.Dennis Deppe(1989). Semiconductor light emitting device with stacked active regions. Applied No 915,583 (1989). US4817103.


1987


Semiconductor alloy lasers

Author : N. Holonyak
Published in: IEEE Journal of Quantum Electronics ( Volume: 23 , Issue: 6 , Jun 1987 )
Publication Date : Jun 1987

Citation: N. Holonyak(1987). Semiconductor alloy lasers. IEEE Journal of Quantum Electronics ( Volume: 23 , Issue: 6 , Jun 1987 ). Doi:10.1109/JQE.1987.1073455.


1986


Wavelength tuning of quantum well heterostructure lasers using an external grating

Inventor : Robert Burnham, Nick Holonyak, Jr., Harlan F. Chung
Appl. No. : 530,555(1986)
Patent Number : US4589115
Patent Date : 13 May 1986

Citation: Robert Burnham, Nick Holonyak, Jr., Harlan F. Chung(1986). Wavelength tuning of quantum well heterostructure lasers using an external grating. 530,555(1986). US4589115.


1983


Method for producing integrated semiconductor light emitter

Inventor : Nick Holonyak, Jr.Wyn D. Laidig
Appl. No. : 260,956 (1983)
Patent Number : US4378255
Patent Date : 29 Mac 1983

Citation: Nick Holonyak, Jr.Wyn D. Laidig(1982). Method for producing integrated semiconductor light emitter. Applied No 260,956 (1983). US4378255.


1982


Semiconductor light emitting device with quantum well active region of indirect bandgap semiconductor material

Inventor : Nick Holonyak, Jr.
Appl. No. : 214,894 (1982)
Patent Number : US4365260
Patent Date : 21 Dec 1982

Citation: Nick Holonyak, Jr.(1982). Semiconductor light emitting device with quantum well active region of indirect bandgap semiconductor material.Applied No 214,894 (1981). Publication of US4270094A.


1981


Semiconductor light emitting device

Inventor : Nick Holonyak, Jr.
Appl. No. : 951,515 (1981)
Patent Number : US4270094A
Patent Date : 26 May 1981

Citation: Nick Holonyak, Jr. (1981). Semiconductor light emitting device. Applied No 951,515 (1981). Publication of US4270094A.


1967


Optical Properties of Gallium Arsenide-Phosphide

Author : George D. Clark, Jr. and Nick Holonyak, Jr.
Phys. Rev. 156, 913
Received :26 August 1966; Published: 15 April 1967

Citation: George D. Clark, Jr. and Nick Holonyak, Jr.(1967). Optical Properties of Gallium Arsenide-Phosphide. doi.org/10.1103/PhysRev.156.913


1962


COHERENT (VISIBLE) LIGHT EMISSION FROM Ga(As1−xPx) JUNCTIONS

Author : Nick Holonyak Jr. and S. F. Bevacqua
Appl. Phys. Lett. 1, 82 (1962)
Published Online: 23 December 2004

Citation: Nick Holonyak Jr. and S. F. Bevacqua(1962). COHERENT (VISIBLE) LIGHT EMISSION FROM Ga(As1−xPx) JUNCTIONS.doi.org/10.1063/1.1753706


Double Injection Diodes and Related DI Phenomena in Semiconductors

Author : Nick Holonyak
Published In : Proceedings of the IRE ( Volume: 50 , Issue: 12 , Dec. 1962 )
Publication Date: December 1962

Citation: Nick Holonyak(1962). Double Injection Diodes and Related DI Phenomena in Semiconductors. Proceedings of the IRE ( Volume: 50 , Issue: 12 , Dec. 1962 ).Doi: 10.1109/JRPROC.1962.288258